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Structural and Electrical Characterization of III-V Semiconductor Nanowires
von Stefanie MorkötterThe main image shows a contacted core-shell GaAs-AlGaAs nanowire with three individual top gates (upper fingers) in between the contacts (lower and outmost fingers) to probe the electrical properties of the nanowire spatially. A resulting transfer curve (gate voltage versus source-drain current) is plotted in the upper left image. At room temperature a sharp switching behavior is observed together with a high I(on)/I(off)-ratio. The lower right image presents a high resolution transmission electron micrograph of an InAs nanowire indicating a mixed wurtzite/zincblende stacking.